elektronische bauelemente SSDF9504 23a, 40v, r ds(on) 26m ?? -20a, -40v, r ds(on) 40m ?? n and p-channel enhancement mode power mosfet 14-nov-2012 rev. b page 1 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed individually. 9 5 0 4 ????? ?? ? = date code rohs compliant product a suffix of ?-c? specifies halogen & lead-free description the SSDF9504 provide the designer with best combination of fast switching, low on-res istance and cost effectiveness. the SSDF9504 meet the rohs and green product requirement , 100% eas guaranteed with full func tion reliability approved. features ? low gate charge ? low on-resistance marking code package information absolute maximum ratings (t a =25 c unless otherwise specified) ratings parameter symbol n-channel p-channel unit drain-source voltage v ds 40 -40 v gate-source voltage v gs 20 20 v t a =25c 23 -20 continuous drain current @ v gs =10v 1 t a =100c i d 18 -16 a pulsed drain current 2 i dm 45 -44 a single pulse avalanche energy 3 e as 28 66 mj avalanche current i as 17.8 -27.2 a power dissipation 4 p d 25 w maximum junction to ambient 1 r ja 62 c / w maximum junction to case 1 r jc 5 c / w operating junction & stor age temperature range t j , t stg -55~150 c package mpq leader size to-252-4l 2.5k 13 inch millimete r millimete r ref. min. max. ref. min. max. a 6.4 6.8 f 0.4 0.6 b 9.4 10.2 g 2.2 2.4 c 5.4 5.8 h 0.45 0.55 d 2.4 3.0 i 1.4 1.8 e 1.27 ref. j 0.8 1.2 to-252-4l
elektronische bauelemente SSDF9504 23a, 40v, r ds(on) 26m ?? -20a, -40v, r ds(on) 40m ?? n and p-channel enhancement mode power mosfet 14-nov-2012 rev. b page 2 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t j = 25 c unless otherwise specified) paramete r s y mbol min. t yp . max. unit test conditions static n-ch 40 - - v gs =0, i d =250 a drain-source breakdown voltage p-ch bv dss -40 - - v v gs =0, i d = -250 a n-ch 1 - 2.5 v ds =v gs , i d =250 a gate-threshold voltage p-ch v gs(th) -1 - -2.5 v v ds =v gs , i d = -250 a n-ch - 8 - v ds =5v, i d =12a forward transconductance p-ch g fs - 12.6 - s v ds = -5v, i d = -8a n-ch - - 100 v gs = 20v gate-source leakage current p-ch i gss - - 100 na v gs = 20v n-ch - - 1 v ds =32v, v gs =0, t j =25c p-ch - - -1 v ds = -32v, v gs =0, t j =25c n-ch - - 5 v ds =32v, v gs =0, t j =55c drain-source leakage current p-ch i dss - - -5 a v ds = -32v, v gs =0 , t j =55c n-ch - - 26 v gs =10v, i d =6a p-ch - - 40 v gs = -10v, i d = -6a n-ch - - 35 v gs =4.5v, i d =4a drain-source on-resistance 2 p-ch r ds(on) - - 65 m ? v gs = -4.5v, i d = -4a n-ch - 5.5 - total gate charge p-ch q g - 9 - n-ch - 1.25 - gate-source charge p-ch q gs - 2.54 - n-ch - 2.5 - gate-drain (?miller?) charge p-ch q gd - 3.1 - nc n-channel v ds =20v, v gs =4.5v, i d =12a p-channel v ds = -20v, v gs = -4.5v, i d = -12a n-ch - 8.9 - turn-on delay time p-ch t d(on) - 19.2 - n-ch - 2.2 - rise time p-ch t r - 12.8 - n-ch - 41 - turn-off delay time p-ch t d(off) - 48.6 - n-ch - 2.7 - fall time p-ch t f - 4.6 - ns n-channel v dd =20v, r g =3.3 ? ,r d =20 ? v gs =10v, i d =1a p-channel v dd = -15v, r g =3.3 ? , r d =20 ? v gs = -10v, i d = -1a n-ch - 593 - input capacitance p-ch c iss - 1004 - n-ch - 76 - output capacitance p-ch c oss - 108 - n-ch - 56 - reverse transfer capacitance p-ch c rss - 80 - pf n-channel v gs =0, v ds =15v, f=1.0mhz p-channel v gs =0, v ds = -15v, f=1.0mhz n-ch - 2.6 5.2 gate resistance p-ch r g - 13 16 ? v ds =v gs =0, f=1.0mhz
elektronische bauelemente SSDF9504 23a, 40v, r ds(on) 26m ?? -20a, -40v, r ds(on) 40m ?? n and p-channel enhancement mode power mosfet 14-nov-2012 rev. b page 3 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions guaranteed avalanche chatacteristics n-ch 9 - - v dd =25v, l=0.1mh, i as =10a single pulse avalanche energy 5 p-ch e as 20 - - mj v dd = -25v, l=0.1mh, i as = -15a source-drain diode n-ch - - 1.2 i s =1a, v gs =0, t j =25c forward on voltage 2 p-ch v sd - - -1 v i s = -1a, v gs =0, t j =25c n-ch - - 23 continuous source current 1,6 p-ch i s - - -20 a n-ch - - 45 pulsed source current 2,6 p-ch i sm - - -44 a v d =v g =0, force current notes: 1 surface mounted on a 1 inch2 fr-4 board with 2oz copper. 2 pulse width Q 300 s, duty cycle Q 2%. 3 the eas data shows max. rating . the test c ondition is vdd=25v,vgs=10v,l=0.1mh,ias=17.8a 4 .the power dissipation is limited by 150 junction temperature 5 the min. value is 100% eas tested guarantee. 6 the data is theoretically the same as id and idm , in real applications , should be limit ed by total power dissipation.
elektronische bauelemente SSDF9504 23a, 40v, r ds(on) 26m ?? -20a, -40v, r ds(on) 40m ?? n and p-channel enhancement mode power mosfet 14-nov-2012 rev. b page 4 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristics cu rve (n-channel)
elektronische bauelemente SSDF9504 23a, 40v, r ds(on) 26m ?? -20a, -40v, r ds(on) 40m ?? n and p-channel enhancement mode power mosfet 14-nov-2012 rev. b page 5 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristics cu rve (n-channel)
elektronische bauelemente SSDF9504 23a, 40v, r ds(on) 26m ?? -20a, -40v, r ds(on) 40m ?? n and p-channel enhancement mode power mosfet 14-nov-2012 rev. b page 6 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristics curve (p-channel)
elektronische bauelemente SSDF9504 23a, 40v, r ds(on) 26m ?? -20a, -40v, r ds(on) 40m ?? n and p-channel enhancement mode power mosfet 14-nov-2012 rev. b page 7 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristics curve (p-channel)
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